Properties of Ballistic current in MOSFETs studied by RT model

Yasuhiro Morozumi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Kenji Natori, Hiroshi Iwai

研究成果: Conference contribution

抄録

How to increase the Ballistic conductivity is an important issue in the nano-scaled MOSFET. In this paper, we employed R-T model to investigate the optimum conditions for higher ballistic conductivity in MOSFET. It was found that a non-doped channel and a drain with a doping concentration less than 1020[cm-3] are essential for obtaining higher ballistic current in the MOSFET with a gate length of 10[nm].

本文言語English
ホスト出版物のタイトルSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
ページ129-132
ページ数4
出版ステータスPublished - 2008
外部発表はい
イベント7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
継続期間: 2008 3 152008 3 17

出版物シリーズ

名前Proceedings - Electrochemical Society
PV 2008-1

Other

Other7th International Conference on Semiconductor Technology, ISTC 2008
国/地域China
CityShanghai
Period08/3/1508/3/17

ASJC Scopus subject areas

  • 電気化学

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