Progress in MOVPE-growth of GaN to InN

研究成果: Conference contribution

抄録

Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity-controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

本文言語English
ホスト出版物のタイトルQuantum Sensing and Nanophotonic Devices V
DOI
出版ステータスPublished - 2008 5 15
イベントQuantum Sensing and Nanophotonic Devices V - San Jose, CA, United States
継続期間: 2008 1 202008 1 23

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6900
ISSN(印刷版)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices V
CountryUnited States
CitySan Jose, CA
Period08/1/2008/1/23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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