Profiling of carriers in a 3D flash memory cell with nanometer-level resolution using scanning nonlinear dielectric microscopy

J. Hirota, K. Yamasue, Y. Cho

研究成果: Article査読

抄録

This work used scanning nonlinear dielectric microscopy to profile the distributions of carriers in channels and floating gate structures less than 10 nm in size within a three dimensional flash memory cell. An exceptionally sharp diamond probe tip (having a radius of less than 5 nm) was employed so as to obtain extremely high spatial resolution, and this technique was found to provide high contrast images of floating gates. The minimum spatial resolution obtainable from this apparatus was determined to be less than 1.9 nm. In addition, the present study demonstrated that variations in the diffusion lengths of N-type impurities between channels were less than 21 nm. The present study establishes an extremely helpful means of optimizing the performance and failure analysis of flash memory cells and similar devices.

本文言語English
論文番号113774
ジャーナルMicroelectronics Reliability
114
DOI
出版ステータスPublished - 2020 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

フィンガープリント 「Profiling of carriers in a 3D flash memory cell with nanometer-level resolution using scanning nonlinear dielectric microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル