Production of semiconductor grade high-purity iron

Masahito Uchikoshi, Junichi Imaizumi, Hideka Shibuya, Tamás Kékesi, Kouji Mimura, Minoru Isshiki

研究成果: Conference article査読

21 被引用数 (Scopus)

抄録

Semiconductor grade high-purity Fe will be required in practical use of β-FeSi2. However, high-purity Fe with more than 99.9999% in purity has not been produced commercially. Then, a process consisting of anion exchange in a HCl solution, hydrogen reduction and plasma arc melting has been developed for the production of high-purity Fe. All metallic impurities can be virtually removed from Fe by the two anion-exchange steps, in which some elements such as Cu and Mo are separated efficiently under reducing conditions by the addition of Fe powder at the 1st step, and the rest of impurities are surely separated under oxidizing conditions at the 2nd step. Non-metallic impurities such as oxygen, carbon and nitrogen also can be eliminated to very low levels by the hydrogen reduction and the hydrogen plasma arc melting steps.

本文言語English
ページ(範囲)94-98
ページ数5
ジャーナルThin Solid Films
461
1
DOI
出版ステータスPublished - 2004 8 2
外部発表はい
イベントProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
継続期間: 2003 10 82003 10 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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