Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge

Reijiro Ikada, Gouki Nishimura, Kohgi Kato, Satoru Iizuka

研究成果: Conference article査読

12 被引用数 (Scopus)

抄録

A noble method for the production of high density and low electron temperature plasma is presented. In plasma enhanced chemical vapor depositions, electron temperature affects the quality of deposited films, so a low-electron-temperature plasma is required to reduce excess dissociated radicals. Here, a grid-biasing method is modified and improved to produce high-electron-density and low-electron-temperature plasmas to increase deposition speed. As a result, the electron temperature is lowered in a range of 0.1-0.5 eV and the electron density is raised from the order of 109 to ∼2×1011 cm-3.

本文言語English
ページ(範囲)55-58
ページ数4
ジャーナルThin Solid Films
457
1
DOI
出版ステータスPublished - 2004 6 1
イベント16th Symposium on Plasma Science for Materials (SPSM-16) - Tokyo, Japan
継続期間: 2003 6 42003 6 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

フィンガープリント 「Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル