Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation

Jiwang Yan, Seiya Muto, Tsunemoto Kuriyagawa

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

本文言語English
ホスト出版物のタイトルAdvances in Abrasive Technology XII
ページ451-456
ページ数6
DOI
出版ステータスPublished - 2009
イベント12th International Symposium on Advances in Abrasive Technology, ISAAT2009 - Gold Coast, QLD, Australia
継続期間: 2009 9 272009 9 30

出版物シリーズ

名前Advanced Materials Research
76-78
ISSN(印刷版)1022-6680

Other

Other12th International Symposium on Advances in Abrasive Technology, ISAAT2009
CountryAustralia
CityGold Coast, QLD
Period09/9/2709/9/30

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル