Process-variation-resilient OTA using MTJ-based multi-level resistance control

Masanori Natsui, Takaaki Nagashima, Takahiro Hanyu

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

A process, voltage, and temperature (PVT) variation conditioning technique using magnetic tunnel junction (MTJ) devices, whose resistance values are programmable, is proposed for realizing a wider design margin in analog integrated circuits. Because MTJ devices are fabricated on top of the CMOS integrated circuit layer, there is a small chip-area overhead for inserting additional MTJ devices into analog circuits, which makes it easy to use the variation-conditioning technique frequently on the entire chip. Additionally, the use of series-parallel connections for MTJ devices allows more flexible adjustment of the resistance. As a typical example, we demonstrate that under 0.18 mm CMOS technology, a simple operational Tran conductance amplifier (OTA) using the proposed technique outperforms a conventional OTA without any variation-conditioning technique.

本文言語English
ホスト出版物のタイトルProceedings - IEEE 42nd International Symposium on Multiple-Valued Logic, ISMVL 2012
ページ214-219
ページ数6
DOI
出版ステータスPublished - 2012
イベント42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012 - Victoria, BC, Canada
継続期間: 2012 5 142012 5 16

出版物シリーズ

名前Proceedings of The International Symposium on Multiple-Valued Logic
ISSN(印刷版)0195-623X

Other

Other42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012
国/地域Canada
CityVictoria, BC
Period12/5/1412/5/16

ASJC Scopus subject areas

  • コンピュータ サイエンス(全般)
  • 数学 (全般)

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