Process and device technologies for high speed self-aligned bipolar transistors

Tohru Nakamura, Takeo Shiba, Takahiro Onai, Takashi Uchino, Yukihiro Kiyota, Katsuyoshi Washio, Noriyuki Homma

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Recent high-speed bipolar technologies based on SICOS (Sidewall Base Contact Structure) transistors are reviewed. Bipolar device structures that include polysilicon are key technologies for improving circuit characteristics. As the characteristics of the upward operated SICOS transistors are close to those of downward transistors, they can easily be applied in memory cells which have near-perfect soft-error-immunity. Newly developed process technologies for making shallow base and emitter junctions to improve circuit performance are also reviewed. Finally, complementary bipolar technology for low-power and high-speed circuits using pnp transistors, and a quasi-drift base transistor structure suitable for below 0.1 μm emitters are discussed.

本文言語English
ページ(範囲)1154-1164
ページ数11
ジャーナルIEICE Transactions on Electronics
E78-C
9
出版ステータスPublished - 1995 9
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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