Probing the behaviors of point defects in silicon and germanium using isotope superlattices

M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh, K. Sawano, Y. Shiraki, E. E. Haller

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

本文言語English
ホスト出版物のタイトルECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009
出版社Electrochemical Society Inc.
ページ51-54
ページ数4
3
ISBN(電子版)9781607680901
ISBN(印刷版)9781566777407
DOI
出版ステータスPublished - 2009
外部発表はい
イベントAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
継続期間: 2009 10月 42009 10月 9

出版物シリーズ

名前ECS Transactions
番号3
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
国/地域Austria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • 工学(全般)

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