Pressure-induced metal-insulator transition in spinel compound CuV2S4

H. Okada, K. Koyama, M. Hedo, Y. Uwatoko, K. Watanabe

研究成果: Article査読

6 被引用数 (Scopus)

抄録

In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.

本文言語English
ページ(範囲)1612-1613
ページ数2
ジャーナルPhysica B: Condensed Matter
403
5-9
DOI
出版ステータスPublished - 2008 4 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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