Preparation of ZrO2 dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage

Joon Woo Bae, Jae Won Lim, Sun Joong Kim, Kouji Mimura, Takamichi Miyazaki, Masahito Uchikoshi, Minoru Isshiki

研究成果: Article査読

2 被引用数 (Scopus)

抄録

ZrO2 dielectric layers were prepared by a two-step process, a deposition of pure Zr film with and without a negative substrate bias voltage and a subsequent oxidation of the Zr films. We focused on the effect of the negative substrate bias voltage on the Zr film deposition and the subsequent oxidation of the Zr films. As a result, the Zr film deposited at the substrate bias voltage of -50 V (Vs = -50 V) was found to have a high intensity peak of Zr (100) and a uniform and smooth surface. From the capacitance-voltage and currentvoltage measurements of the ZrO2 films, a high dielectric constant of 21 and the equivalent oxide thickness (EOT) of 2.6 nm were obtained on the oxidation layer of the Zr film deposited at Vs = -50 V. On the other hand, a low dielectric constant of 15 and the EOT of 3.6 nm was obtained on that of the Zr film deposited at Vs = 0 V. The leakage current density of the ZrO2 film (Vs = -50 V) was 5.69×10-4 A/cm 2 , and this value was much lower than the 1.21×10-4 A/cm2 for the ZrO2 film (Vs = 0 V). It was found that the two-step process by subsequent oxidation after film deposition using a negative substrate bias voltage is useful for obtaining high-quality dielectric layers.

本文言語English
ページ(範囲)447-452
ページ数6
ジャーナルMetals and Materials International
16
3
DOI
出版ステータスPublished - 2010 6

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

フィンガープリント

「Preparation of ZrO<sub>2</sub> dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル