Y-Ba-Cu-O films were prepared at 700»C on Si(100) substrates and on (Y2O3)/(Y2O3 stabilized ZrO2) buffer layers by chemical vapor deposition using p-diketone metal chelates assources. The films were mainly composed of c-axis oriented YBa2Cu3Ox. Auger electron spectroscopy revealed interdiffusion of elements between the substrates and the films deposited directly on the Si substrates. The interdiffusion was prevented using the buffer layers. Epitaxial growth of YBa2Cu3Ox was confiremed by X-ray pole figure analysis for the films depositedon the Si substrates with the buffer layers. The films on the buffer layers showed zero resistivity at 87 K. Its critical current density was 10 3A/cm2 at 77 K and 0 T.
|ジャーナル||journal of the japan society of powder and powder metallurgy|
|出版ステータス||Published - 1992 6|
ASJC Scopus subject areas
- Mechanical Engineering
- Industrial and Manufacturing Engineering
- Metals and Alloys
- Materials Chemistry