Preparation of TiO2 thick film by laser chemical vapor deposition method

Dongyun Guo, Akihiko Ito, Takashi Goto, Rong Tu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (Rdep = 11.4 μm h-1). At 300 K and 1 MHz, the dielectric constant (εr) and loss (tanδ) of the TiO2 film were about 73.0 and 0.0069, respectively. The electrical properties of TiO2 film were investigated by ac impedance spectroscopy over ranges of temperature (300-873 K) and frequency (10 2-107 Hz). The Cole-Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO2 film was dominated by the oxygen vacancies.

本文言語English
ページ(範囲)1758-1763
ページ数6
ジャーナルJournal of Materials Science: Materials in Electronics
24
6
DOI
出版ステータスPublished - 2013 6月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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