Preparation of stoichiometric TiNx films by laser CVD with metalorganic precursor

Yan Sheng Gong, Wei Zhou, Rong Tu, Takashi Goto

研究成果: Conference contribution

抄録

Nearly stoichiometric TiNx films were deposited on Al 2O3 substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power (PL) and pre-heating temperature (Tpre) on the composition and deposition rate of TiNx films. Single phase of TiNx films with columnar cross section were obtained. The ratio of N to Ti in TiNx films increased with increasing PL and was close to stoichiometric at PL > 150 W. The deposition rate of TiNx films with a depositing area of 300 mm2 was about 18-90 μm/h, which decreased with increasing PL and Tpre.

本文言語English
ホスト出版物のタイトルAdvanced Materials
ページ318-321
ページ数4
DOI
出版ステータスPublished - 2011
イベント2011 International Conference on Chemical Engineering and Advanced Materials, CEAM 2011 - Changsha, China
継続期間: 2011 5 282011 5 30

出版物シリーズ

名前Advanced Materials Research
239-242
ISSN(印刷版)1022-6680

Other

Other2011 International Conference on Chemical Engineering and Advanced Materials, CEAM 2011
CountryChina
CityChangsha
Period11/5/2811/5/30

ASJC Scopus subject areas

  • Engineering(all)

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