Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN

Cheng Xin Wang, Chun Xiao Gao, Tie Chen Zhang, Hong Wu Liu, Xun Li, Yong Hao Han, Ji Feng Luo, Cai Xia Shen

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heretojunction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

本文言語English
ページ(範囲)1513-1515
ページ数3
ジャーナルChinese Physics Letters
19
10
DOI
出版ステータスPublished - 2002 10月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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