The Bi0.85Nd0.15FeO3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by Sol-gel method. The effect of annealing temperature on formation of Bi0.85Nd0.15FeO3 phase was investigated. It was found that the Bi0.85Nd0.15FeO3 phase was formed and coexisted with the impurity phase when the films annealed at 450°C. The single-phase Bi0.85Nd0.15FeO3 films were obtained, when they were annealed at 500-600°C. Bi0.85Nd0.15FeO3 films annealed at 600°C had saturated magnetization about 44.8 emu/cm3, remnant polarization (2 Pr) about 16.6 μC/cm2, dielectric constant 145 and dielectric loss 0.032(1 MHz), respectively.
|ジャーナル||Wuli Xuebao/Acta Physica Sinica|
|出版ステータス||Published - 2010 8 1|
ASJC Scopus subject areas