抄録
A low-temperature synthetic method for preparing lead zirconate titanate (PZT) perovskite film on a Pt substrate is proposed. The method consists of the self-assembly of PZT particles on a substrate and successive spin coating with a precursor of PZT. The PZT particles that had sub-micron sizes and perovskite structures were prepared by annealing amorphous PZT particles formed from a complex alkoxide precursor. The PZT particles were deposited on a Pt substrate that was surface-modified with (3-mercaptopropyl) trimethoxysilane to chemically fix the particles on the substrate. Another PZT precursor solution was used for the spin-coating on the PZT-deposited substrate, and then the spin-coated film was annealed at 350°C to remove organic residues left in the film. The spin-coated PZT film prepared at 350°C had a dielectric constant of 118 at a frequency of 1000 Hz.
本文言語 | English |
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ページ(範囲) | 264-269 |
ページ数 | 6 |
ジャーナル | Thin Solid Films |
巻 | 457 |
号 | 2 |
DOI | |
出版ステータス | Published - 2004 6月 15 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 表面および界面
- 表面、皮膜および薄膜
- 金属および合金
- 材料化学