Preparation of layered-rhombohedral LiCoO2 epitaxial thin films using pulsed laser deposition

Tetsukazu Tsuruhama; Taro Hitosugi; Hideki Oki; Yasushi Hirose; Tetsuya Hasegawa

doi:10.1143/APEX.2.085502

Preparation of layered-rhombohedral LiCoO₂ epitaxial thin films using pulsed laser deposition

Tetsukazu Tsuruhama, Taro Hitosugi, Hideki Oki, Yasushi Hirose, Tetsuya Hasegawa

研究成果: Article › 査読

35 被引用数 (Scopus)

抄録

Epitaxial thin films of layered-rhombohedral LiCoO₂ (α-NaFeO₂ structure, R3m) have been successfully grown on Al₂O₃(0001) substrates using pulsed laser deposition. A single phase of LiCoO₂ was obtained in the narrow substrate temperature range of 250-300°C, above which secondary phases, such as Co₂O₃,Co₃O₄, and LiCo ₂O₄, appeared. In addition, it was found that annealing of precursor films deposited at room temperature yielded atomically flat LiCoO₂ films with a surface roughness of ∼0.2 nm.

本文言語	English
論文番号	085502
ジャーナル	Applied Physics Express
巻	2
号	8
DOI	https://doi.org/10.1143/APEX.2.085502
出版ステータス	Published - 2009 8月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/APEX.2.085502

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引用スタイル

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AU - Hasegawa, Tetsuya

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AB - Epitaxial thin films of layered-rhombohedral LiCoO2 (α-NaFeO2 structure, R3m) have been successfully grown on Al2O3(0001) substrates using pulsed laser deposition. A single phase of LiCoO2 was obtained in the narrow substrate temperature range of 250-300°C, above which secondary phases, such as Co2O3,Co3O4, and LiCo 2O4, appeared. In addition, it was found that annealing of precursor films deposited at room temperature yielded atomically flat LiCoO2 films with a surface roughness of ∼0.2 nm.

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