Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs+ ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||Published - 2003 5|
|イベント||13th International conference on Ion beam modification of Mate - Kobe, Japan|
継続期間: 2002 9 1 → 2002 9 6
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