TY - JOUR
T1 - Preparation of epitaxial pt bottom electrode and tunability of (Ba,Sr)TiO3 thin film deposited on Si substrate
AU - Wakiya, Naoki
AU - Higuchi, Akinori
AU - Sakamoto, Naonori
AU - Mizutani, Nobuyasu
AU - Kiguchi, Takanori
AU - Suzuki, Hisao
AU - Shinozaki, Kazuo
PY - 2008/12/1
Y1 - 2008/12/1
N2 - (001) oriented epitaxial Pt bottom electrode was prepared on Si(001) substrate using four fold buffer layer of ST/LSCO/CeO2/YSZ. On the epitaxial Pt bottom electrode, we found that both epitaxial and polycrystalline BST thin film can be prepared by the change of oxygen gas flow procedure during heating up to deposition temperature of BST. Without oxygen gas flow on the heating process of the Pt bottom electrode, BST thin film was changed into polycrystalline, on the other hand, when the Pt bottom electrode was heated in 100 mTorr of oxygen pressure, epitaxial grown BST thin film was realized. This means that the orientation of BST thin film can be controlled by the oxygen flow procedure during heating of the Pt bottom electrode. Dielectric constant and tunability of epitaxial BST thin film changed with the oxygen pressure during heating and deposition of BST thin film. This suggests that oxygen pressure during heating and deposition is the key to control the orientation and properties of BST thin film.
AB - (001) oriented epitaxial Pt bottom electrode was prepared on Si(001) substrate using four fold buffer layer of ST/LSCO/CeO2/YSZ. On the epitaxial Pt bottom electrode, we found that both epitaxial and polycrystalline BST thin film can be prepared by the change of oxygen gas flow procedure during heating up to deposition temperature of BST. Without oxygen gas flow on the heating process of the Pt bottom electrode, BST thin film was changed into polycrystalline, on the other hand, when the Pt bottom electrode was heated in 100 mTorr of oxygen pressure, epitaxial grown BST thin film was realized. This means that the orientation of BST thin film can be controlled by the oxygen flow procedure during heating of the Pt bottom electrode. Dielectric constant and tunability of epitaxial BST thin film changed with the oxygen pressure during heating and deposition of BST thin film. This suggests that oxygen pressure during heating and deposition is the key to control the orientation and properties of BST thin film.
UR - http://www.scopus.com/inward/record.url?scp=75449090996&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=75449090996&partnerID=8YFLogxK
U2 - 10.1080/00150190802384484
DO - 10.1080/00150190802384484
M3 - Conference article
AN - SCOPUS:75449090996
SN - 0015-0193
VL - 370
SP - 132
EP - 139
JO - Ferroelectrics
JF - Ferroelectrics
IS - 1 PART 4
T2 - 11th European Meeting on Ferroelectricity, EMF-2007
Y2 - 3 September 2007 through 7 September 2007
ER -