抄録
AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.
本文言語 | English |
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ページ(範囲) | 1359-1361 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 64 |
号 | 11 |
DOI | |
出版ステータス | Published - 1994 |
ASJC Scopus subject areas
- 物理学および天文学(その他)