Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang; Roberto Vargas; Takashi Goto; Yoshihiro Someno; Toshio Hirai

doi:10.1063/1.111934

Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang, Roberto Vargas, Takashi Goto, Yoshihiro Someno, Toshio Hirai

金属材料研究所・材料プロセス・評価研究部

研究成果: Article › 査読

35 被引用数 (Scopus)

抄録

AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al₂O₃ substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr ₃-N₂-H₂-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al₂O₃ structure in surface acoustic wave (SAW) devices.

本文言語	English
ページ（範囲）	1359-1361
ページ数	3
ジャーナル	Applied Physics Letters
巻	64
号	11
DOI	https://doi.org/10.1063/1.111934
出版ステータス	Published - 1994

ASJC Scopus subject areas

物理学および天文学（その他）

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abstract = "AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.",

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AU - Hirai, Toshio

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AB - AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

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