Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang, Roberto Vargas, Takashi Goto, Yoshihiro Someno, Toshio Hirai

研究成果: Article査読

35 被引用数 (Scopus)

抄録

AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

本文言語English
ページ(範囲)1359-1361
ページ数3
ジャーナルApplied Physics Letters
64
11
DOI
出版ステータスPublished - 1994 12 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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