Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang; Roberto Vargas; Takashi Goto; Yoshihiro Someno; Toshio Hirai

doi:10.1063/1.111934

Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

Wei Zhang, Roberto Vargas, Takashi Goto, Yoshihiro Someno, Toshio Hirai

金属材料研究所・材料プロセス・評価研究部

研究成果: Article › 査読

35 被引用数 (Scopus)

抄録

AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al₂O₃ substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr ₃-N₂-H₂-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al₂O₃ structure in surface acoustic wave (SAW) devices.

本文言語	English
ページ（範囲）	1359-1361
ページ数	3
ジャーナル	Applied Physics Letters
巻	64
号	11
DOI	https://doi.org/10.1063/1.111934
出版ステータス	Published - 1994 12 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.111934

フィンガープリント「Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{3e617b416f194276955df2d1816b70b0,

title = "Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates",

abstract = "AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.",

author = "Wei Zhang and Roberto Vargas and Takashi Goto and Yoshihiro Someno and Toshio Hirai",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.111934",

language = "English",

volume = "64",

pages = "1359--1361",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

AU - Zhang, Wei

AU - Vargas, Roberto

AU - Goto, Takashi

AU - Someno, Yoshihiro

AU - Hirai, Toshio

PY - 1994/12/1

Y1 - 1994/12/1

N2 - AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

AB - AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr 3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700°C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

UR - http://www.scopus.com/inward/record.url?scp=36448999326&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36448999326&partnerID=8YFLogxK

U2 - 10.1063/1.111934

DO - 10.1063/1.111934

M3 - Article

AN - SCOPUS:36448999326

VL - 64

SP - 1359

EP - 1361

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -