Preparation of Cu(In, AI)Se2 thin films by selenization using diethylselenide

Akihisa Umezawa; Toshihiro Yasuniwa; Atsushi Miyama; Hisayuki Nakanishi; Mutsumi Sugiyama; Shigefusa Chichibu

doi:10.1002/pssc.200881165

Preparation of Cu(In, AI)Se₂ thin films by selenization using diethylselenide

Akihisa Umezawa, Toshihiro Yasuniwa, Atsushi Miyama, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa Chichibu

多元物質科学研究所・計測研究部門

研究成果: Conference article › 査読

4 被引用数 (Scopus)

抄録

Selenization growth o± purely single-phase, polycrystalline CuIn_1-xAl_xSe₂ (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C₂H₅)₂Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe₂ photoabsorbing layers.

本文言語	English
ページ（範囲）	1016-1018
ページ数	3
ジャーナル	Physica Status Solidi (C) Current Topics in Solid State Physics
巻	6
号	5
DOI	https://doi.org/10.1002/pssc.200881165
出版ステータス	Published - 2009 9月 30
イベント	16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany 継続期間: 2008 9月 15 → 2008 9月 19

ASJC Scopus subject areas

凝縮系物理学

文献へのアクセス

10.1002/pssc.200881165

他のファイルとリンク

引用スタイル

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title = "Preparation of Cu(In, AI)Se2 thin films by selenization using diethylselenide",

abstract = "Selenization growth o± purely single-phase, polycrystalline CuIn1-xAlxSe2 (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C2H5)2Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe2 photoabsorbing layers.",

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T1 - Preparation of Cu(In, AI)Se2 thin films by selenization using diethylselenide

AU - Umezawa, Akihisa

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AU - Miyama, Atsushi

AU - Nakanishi, Hisayuki

AU - Sugiyama, Mutsumi

AU - Chichibu, Shigefusa

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AB - Selenization growth o± purely single-phase, polycrystalline CuIn1-xAlxSe2 (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C2H5)2Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe2 photoabsorbing layers.

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