Preparation of c-Axis Oriented PbTi03 Films by MOCVD

Xiantong Chen, Hisanori Yamane, Kiyoshi Kaya, Toshio Hirai

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Thin films of Pb—Ti—O were prepared on MgO(lOO) substrates by chemical vapor deposition using Pb(C2H5)4 and Ti(OC3H7)4 as sources. When the evaporation temperatures of Pb(C2H5)4 and Ti(OC3H7)4 were 50 and 15°C, respectively, the Pb/Ti molar ratio of the films had a maximum value about 1.2 at 500 °C. The Pb/Ti ratio of the deposits obtained at 600 °C decreased with increasing total gas pressure. The peaks from perovskite-type structure with the tetragonal symmetry were observed in the X-ray diffraction patterns of the films deposited at 2kPa and 400∼800 °C and at 2∼8 kPa and 600 °C, Most of the films shows αpha;-axis and c-axis orientation perpendicular to the film plane. The ratio of c-axis orientation “αpha;” was evaluated by using an equation: αpha; =I(001)/{I(001) +7(100)}, where 1(001) and 7(100) were the X -ray diffraction intensities of (001) and (100) reflection, respectively. The values of αpha; increased when the Pb/Ti molar ratio approached to 1. PbTiO3 thin films having a high c-axis orientation of αpha; =0.98 were successfully prepared with a deposition rate of 17 nm/min at 500°C.

本文言語English
ページ(範囲)1367-1372
ページ数6
ジャーナルNIPPON KAGAKU KAISHI
1991
10
DOI
出版ステータスPublished - 1991

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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