Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.