Preparation of bismuth titanate films by chemical vapor deposition

Hiroshi Masumoto, Masahiko Namerikawa, Toshio Hirai

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.

本文言語English
ホスト出版物のタイトルFirst International Conference on Processing Materials for Properties
出版社Publ by Minerals, Metals & Materials Soc (TMS)
ページ1113-1116
ページ数4
ISBN(印刷版)0873392566
出版ステータスPublished - 1993 12 1
イベントProceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA
継続期間: 1993 11 71993 11 10

出版物シリーズ

名前First International Conference on Processing Materials for Properties

Other

OtherProceedings of the 1st International Conference on Processing Materials for Properties
CityHonolulu, HI, USA
Period93/11/793/11/10

ASJC Scopus subject areas

  • 工学(全般)

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