Preparation of B-C-Si system composites by arc melting and their thermoelectric properties

Takashi Goto, Eiji Ito, Masakazu Mukaida, Toshio Hirai

研究成果: Article査読

1 被引用数 (Scopus)

抄録

B4C-SiC quasi-binary and B-C-Si ternary composites were prepared by arc melting in argon atmosphere using B4C, SiC, Si, B and C powders. Uniform lamella texture indicating eutectic reaction was observed at SiC molar content of 45 to 50mol% in the quasi-binary system. Free C and free Si co-precipitated at the C-rich and Si-rich side of the quasi-binary compositions, respectively. The thermoelectric figure of merit values (Z) of the B4C-SiC composites were generally greater than those of the C-rich and Si-rich composites. The SiC-B4C composites near the eutectic composition (40mol%SiC) showed the greatest Seebeck coefficient, electrical conductivity and Z values. The greatest ZT value of the B4C-SiC composites (40mol%SiC) at T=1100K was about 0.2.

本文言語English
ページ(範囲)311-315
ページ数5
ジャーナルFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
43
3
DOI
出版ステータスPublished - 1996 3

ASJC Scopus subject areas

  • 機械工学
  • 産業および生産工学
  • 金属および合金
  • 材料化学

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