Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's

Seiichi Takahashi, Tokio Nakada, Kiichi Kamimura, Hideaki Zama, Takeo Hattori, Akio Kunioka

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Thin silicon nitride (Six) layers have been successfully prepared by photochemical vapor deposition (photo-CVD) technique. Ellipsometric and X-ray photoelectron spectroscopic studies prove that the refractive index and concentration of nitrogen in the layer are strongly dependent on the substrate temperature. The interface state density at the SiNx/InP interface is estimated to be 8×1011 cm-2 eV-1 from the capacitance-voltage characteristics of InP MIS diodes. Using SiNx layer as a gate insulator, InP MISFET's were fabricated on semi-insulating InP substrates.

本文言語English
ページ(範囲)L1606-L1609
ジャーナルJapanese journal of applied physics
26
10 A
DOI
出版ステータスPublished - 1987 10月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル