Preparation and properties of III-V based new diluted magnetic semiconductors

研究成果: Article査読

抄録

Preparation and properties of a new class of diluted magnetic semiconductors (DMS's) based on III-V compounds are reviewed. Epitaxial films of (In,Mn)As and (Ga,Mn)As, the new III-V based DMS's, are now possible by low temperature molecular beam epitaxial growth (< 300°C). The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance of SQUID magnetization measurements. The epitaxial films showed antiferromagnetic, superparamagnetic, and ferromagnetic behaviors depending on the Mn-Mn interaction, which was modified by the presence of carriers and strain in the layers. These new III-V based DMS's will open up new fields in semiconductor technology, where both semiconducting and magnetic properties play critical roles.

本文言語English
ページ(範囲)61-75
ページ数15
ジャーナルAdvances in Colloid and Interface Science
71-72
DOI
出版ステータスPublished - 1997 9 1

ASJC Scopus subject areas

  • 表面および界面
  • 物理化学および理論化学
  • コロイド化学および表面化学

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