Preparation and pressureless sintering of chemical vapour deposited SiC-B composite powder

Lidong Chen, Takashi Goto, Toshio Hirai

研究成果: Article査読

16 被引用数 (Scopus)

抄録

SiC-B composite powder was prepared by chemical vapour deposition (CVD) using (CH3)2SiCl2+ B2H6+ H2 as source gases at 1673 K. The powder was β-type polycrystalline silicon carbide containing several per cents of boron and carbon. The boron content increased from 0 to 7.7 mass % as the B2H6 gas concentration increased from 0 to 0.7 mol %. Boron and carbon in amorphous form dispersed homogeneously in the β-SiC polycrystalline particles. The particles were spherical, non-agglomerated and uniform in size with an average particle size of about 50 nm. Sintering tests were performed with the resulting composite powder without applying pressure. Powder containing 1 mass % boron and 2 mass % carbon was sintered to a density of 3.16 × 103 kg m-3 at 2273 K, and the Vickers hardness of the sintered body was 30 GPa. When the sintering temperature was higher than 2323 K, significant grain growth due to the phase transformation from β to α form occurred, which decreased bulk density and Vickers hardness.

本文言語English
ページ(範囲)679-683
ページ数5
ジャーナルJournal of Materials Science
31
3
DOI
出版ステータスPublished - 1996 1 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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