Hot pressed sintering is used to fabricate CIGS targets with Cu2Se, In2Se3, and Ga2Se3 as raw powders. The influences of sintering temperature and sintering pressure on the phase structures, section morphology and composition of the target were studied. The results showed that chalcopyrite CuInSe2 is acquired at lower sintering temperature. With temperature increasing, Ga atom diffuses in CIS gradually and CIS converts into a homogeneous quaternary CIGS structure. Density of CIGS target enhances obviously by increasing the sintering pressure while the extension of sintering duration has no influence on the density. A CIGS target with a relative density more than 96% can be obtained at sintering temperature of 900°C and sintering pressure of 45 MPa.
|ジャーナル||Taiyangneng Xuebao/Acta Energiae Solaris Sinica|
|出版ステータス||Published - 2013 12|
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Energy Engineering and Power Technology
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics