Preparation and dielectric and electrooptic properties of bi₄ti₃o₁₂ films by electron cyclotron resonance plasma sputtering deposition

Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi₄Ti₃O₁₂ in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi₄Ti₃O₁₂ films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi₄Ti₃O₁₂ films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.