Preferential nucleation along SiO2 steps in amorphous Si

M. Moniwa, M. Miyao, R. Tsuchiyama, A. Ishizaka, M. Ichikawa, H. Sunami, T. Tokuyama

    研究成果: Article査読

    28 被引用数 (Scopus)

    抄録

    Annealing characteristics for amorphous Si film deposited on an SiO 2 layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO 2 steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO2 and Si, is considered to be the driving force.

    本文言語English
    ページ(範囲)113-115
    ページ数3
    ジャーナルApplied Physics Letters
    47
    2
    DOI
    出版ステータスPublished - 1985

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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