Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuko Nozawa, Takeshi Toyama, Fumiko Yano, Masao Inoue, Akio Nishida, Yasuyoshi Nagai

研究成果: Article査読

抄録

The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.

本文言語English
論文番号106601
ジャーナルApplied Physics Express
9
10
DOI
出版ステータスPublished - 2016 10

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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