Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique

Butsurin Jinnai, Seiichi Fukuda, Hiroto Ohtake, Seiji Samukawa

研究成果: Article査読

46 被引用数 (Scopus)

抄録

UV radiation during plasma processing affects the surface of materials. Nevertheless, the interaction of UV photons with surface is not clearly understood because of the difficulty in monitoring photons during plasma processing. For this purpose, we have previously proposed an on-wafer monitoring technique for UV photons. For this study, using the combination of this on-wafer monitoring technique and a neural network, we established a relationship between the data obtained from the on-wafer monitoring technique and UV spectra. Also, we obtained absolute intensities of UV radiation by calibrating arbitrary units of UV intensity with a 126 nm excimer lamp. As a result, UV spectra and their absolute intensities could be predicted with the on-wafer monitoring. Furthermore, we developed a prediction system with the on-wafer monitoring technique to simulate UV-radiation damage in dielectric films during plasma etching. UV-induced damage in SiOC films was predicted in this study. Our prediction results of damage in SiOC films shows that UV spectra and their absolute intensities are the key cause of damage in SiOC films. In addition, UV-radiation damage in SiOC films strongly depends on the geometry of the etching structure. The on-wafer monitoring technique should be useful in understanding the interaction of UV radiation with surface and in optimizing plasma processing by controlling UV radiation.

本文言語English
論文番号043302
ジャーナルJournal of Applied Physics
107
4
DOI
出版ステータスPublished - 2010

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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