Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis

Haruhisa Shigeyama, Takenao Nemoto, Toshimitsu Yokobori

    研究成果: Conference contribution

    抄録

    The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.

    本文言語English
    ホスト出版物のタイトルAdvanced Metallization Conference 2010
    ページ229-230
    ページ数2
    出版ステータスPublished - 2010 12 1
    イベントAdvanced Metallization Conference 2010 - Albany, NY, United States
    継続期間: 2010 10 52010 10 7

    出版物シリーズ

    名前Advanced Metallization Conference (AMC)
    ISSN(印刷版)1540-1766

    Other

    OtherAdvanced Metallization Conference 2010
    国/地域United States
    CityAlbany, NY
    Period10/10/510/10/7

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 産業および生産工学

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