Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Silicon (Si) nanopillar (NP)-based gate-all-around metal–oxide–semiconductor field-effect transistors (MOSFETs) are considered the primary components of next-generation integrated circuits according to the International Roadmap of Devices and Systems. In order to replace fin-structured MOSFETs with a several-nanometer technology node that is currently used, a precise fabrication method for uniform Si NPs with a sub-10-nm diameter and cylindrical shape is required. This study demonstrates that a double-oxidation process is capable of solving this problem for the first time. In particular, it includes the first oxidation at 900°C with deep self-limiting oxidation for shape control and variance decrease and second oxidation at 1000°C with a controllable oxidation rate for precise diameter control, with wet etching between two oxidations. Although Si oxidation is orientation dependent, the traverse cross-section of Si NPs is experimentally confirmed to keep a circle shape during oxidation and is theoretically attributed to the edge effect.

本文言語English
論文番号113818
ジャーナルScripta Materialia
198
DOI
出版ステータスPublished - 2021 6

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金

フィンガープリント

「Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル