Precise control of gas concentration ratio in process chamber

M. Nagase, M. Kitano, Y. Shirai, T. Ohmi

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A new system for controlling gas concentration in a process chamber was developed using a combination of a new flow controller and a gas pumping system. The new flow controller does not exhibit overshooting; thus, a stable gas flow rate can be realized in a process chamber after valve operation. Furthermore, very rapid gas displacement in the chamber can be realized by combined gas flow system and pumping system. As a result, it took only 2 s to stabilize chamber pressure and gas composition from purge gas to process gases using Fourier transform infrared spectroscopy (FT-IR) method. It is possible to control process parameters such as gas concentration and working pressure during the entire process using this system.

本文言語English
ページ(範囲)5168-5172
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
8
DOI
出版ステータスPublished - 2001 8

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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