Precise control of epitaxy of graphene by microfabricating SiC substrate

H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th Seyller, M. Suemitsu

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.

本文言語English
論文番号041605
ジャーナルApplied Physics Letters
101
4
DOI
出版ステータスPublished - 2012 7 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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