Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka

研究成果: Conference article査読

抄録

The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

本文言語English
ジャーナルMaterials Research Society Symposium Proceedings
1591
DOI
出版ステータスPublished - 2014 1 1
外部発表はい
イベント2013 JSAP-MRS Joint Symposia - Kyoto, Japan
継続期間: 2013 9 162013 9 20

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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