Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise

Motoyuki Sato, Jun Chen, Takashi Sekiguchi, Toyohiro Chikyow, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. With this method, we could observe the pre-existing and stress induced defect in high-k. This pre-existing defect affect on MOSFET characteristics. We investigated in detail the relationship between the defect (in bulk high-k and interface) and 1/f noise on (110) and (100) substrates. The 1/f noise is strongly related to the degradation in the hole mobility due to the pre-existing defect or process integration damage. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation.

本文言語English
ホスト出版物のタイトル2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
ページ86-89
ページ数4
DOI
出版ステータスPublished - 2010 8 20
外部発表はい
イベント2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010 - Grenoble, France
継続期間: 2010 6 22010 6 4

出版物シリーズ

名前2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010

Conference

Conference2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
CountryFrance
CityGrenoble
Period10/6/210/6/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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