Possibility of CuMg for Liner-Barrier Free Interconnects

Linghan Chen, Daisuke Ando, Yuji Sutou, Masataka Yahagi, Junichi Koike

研究成果: Conference contribution

抄録

CuMg intermetallic compound was selected as a candidate material for liner-barrier free interconnects for advanced LSI interconnects. The blanket films of CuMg showed an excellent resistivity scaling with resistivity value of only 25 μΩcm at a film thickness of 5 nm. However, a thick MgO layer was formed within the underlying SiO layer by interface reaction between CuMg and SiO. Progressive growth of MgO made it unfavorable for CuMg to be used as liner-barrier free interconnects.

本文言語English
ホスト出版物のタイトル2020 IEEE International Interconnect Technology Conference, IITC 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ85-87
ページ数3
ISBN(電子版)9781728161136
DOI
出版ステータスPublished - 2020 10 5
イベント2020 IEEE International Interconnect Technology Conference, IITC 2020 - Virtual, San Jose, United States
継続期間: 2020 10 52020 10 9

出版物シリーズ

名前2020 IEEE International Interconnect Technology Conference, IITC 2020

Conference

Conference2020 IEEE International Interconnect Technology Conference, IITC 2020
国/地域United States
CityVirtual, San Jose
Period20/10/520/10/9

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 金属および合金
  • 電子材料、光学材料、および磁性材料

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