We have demonstrated position controlled GaN nano structures with a combination of surface treatments and nucleation sites control assisted by low energy focused ion beam. Ga ions in the range of 100 eV - 10 keV were irradiated onto the surface of the As-terminated Si (100) to create the nucleation sites. The deposited Ga atoms migrated on the surface and were trapped at the nucleation sites to form Ga droplets. Subsequently an excited atomic nitrogen source was supplied to the surface. By SEM observation, the GaN microcrystals of diameter about 800 nm were found to be allocated every 2 μm periodically on the substrates, and cathodoluminescence peaks from GaN nano structures were observed.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 2003|
|イベント||Radiation Effects and Ion-Beam Processing of Materials - Boston, MA., United States|
継続期間: 2003 12 1 → 2003 12 5
ASJC Scopus subject areas