Position controlled GaN nano-structures fabricated by low energy focused ion beam system

Takahiro Nagata, Parhat Ahmet, Takashi Koida, Shigefusa F. Chichibu, Toyohiro Chikyow

研究成果: Conference article査読

抄録

We have demonstrated position controlled GaN nano structures with a combination of surface treatments and nucleation sites control assisted by low energy focused ion beam. Ga ions in the range of 100 eV - 10 keV were irradiated onto the surface of the As-terminated Si (100) to create the nucleation sites. The deposited Ga atoms migrated on the surface and were trapped at the nucleation sites to form Ga droplets. Subsequently an excited atomic nitrogen source was supplied to the surface. By SEM observation, the GaN microcrystals of diameter about 800 nm were found to be allocated every 2 μm periodically on the substrates, and cathodoluminescence peaks from GaN nano structures were observed.

本文言語English
ページ(範囲)605-609
ページ数5
ジャーナルMaterials Research Society Symposium - Proceedings
792
DOI
出版ステータスPublished - 2003
イベントRadiation Effects and Ion-Beam Processing of Materials - Boston, MA., United States
継続期間: 2003 12 12003 12 5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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