Population inversion and terahertz lasing in grapheme

V. Mitin, V. Ryzhii, M. Ryzhii, T. Otsuji

研究成果: Conference contribution

抄録

We report on the effect of population inversion associated with the electron and hole injection in graphene pi- n structures at the temperatures 200K-300K. It is assumed that the recombination and energy relaxation of electrons and holes is associated primarily with the interband and intraband processes assisted by optical phonons. The dependences of the electron-hole and optical phonon effective temperatures on the applied voltage, the current-voltage characteristics, and the frequency-dependent dynamic conductivity are obtained. In particular, at low and moderate voltages the injection can lead to a pronounced cooling of the electron-hole plasma in the device i-section to the temperatures below the lattice temperature. At higher voltages, the current and electronhole and phonon temperature dependences on voltage exhibit the S-shape. At a certain values of the applied voltage the frequency-dependent dynamic conductivity can be negative in the terahertz range of frequencies. The electron-hole plasma cooling substantially reinforces the effect of negative dynamic conductivity and promotes the realization of terahertz lasing. It is demonstrated that the heating of optical phonon system hinders the realization of negative dynamic conductivity and terahertz lasing at the room temperatures.

本文言語English
ホスト出版物のタイトルMicro- and Nanotechnology Sensors, Systems, and Applications IV
DOI
出版ステータスPublished - 2012
イベントMicro- and Nanotechnology Sensors, Systems, and Applications IV - Baltimore, MD, United States
継続期間: 2012 4月 232012 4月 27

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8373
ISSN(印刷版)0277-786X

Other

OtherMicro- and Nanotechnology Sensors, Systems, and Applications IV
国/地域United States
CityBaltimore, MD
Period12/4/2312/4/27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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