Poly(N-alkylmethacrylamide) LB films with short-branched alkyl side chains for a self-developed positive photoresist

Yinzhong Guo, Masaya Mitsuishi, Tokuji Miyashita

研究成果: Article査読

23 被引用数 (Scopus)

抄録

An ultrathin film of poly(N-neopentylmethacrylamide) (PnPMA) prepared by the Langmuir-Blodgett technique was examined as a high-resolution self-developed photoresist. The properties of the LB films were investigated using UV absorption spectra and X-ray diffraction. Fine lines and spaces with positive-tone patterns on the LB film were achieved solely by deep UV irradiation (self-development). A fine gold pattern with a resolution of 1.5 μm was obtained by etching patterned LB film on gold film deposited on a glass substrate, indicating that 20 layers of LB film (about 20 nm) is stable against wet etching.

本文言語English
ページ(範囲)3548-3551
ページ数4
ジャーナルMacromolecules
34
11
DOI
出版ステータスPublished - 2001 5 22

ASJC Scopus subject areas

  • Organic Chemistry
  • Polymers and Plastics
  • Inorganic Chemistry
  • Materials Chemistry

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