Poly-SiGe-based MEMS thin-film encapsulation

Bin Guo, Bo Wang, Lianggong Wen, Philippe Helin, Gert Claes, Jeroen De Coster, Bert Du Bois, Agnes Verbist, Rita Van Hoof, Guy Vereecke, Luc Haspeslagh, Harrie A.C. Tilmans, Stefaan Decoutere, Haris Osman, Robert Puers, Ingrid De Wolf, Shuji Tanaka, Simone Severi, Ann Witvrouw

研究成果: Article査読

17 被引用数 (Scopus)

抄録

This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm 2 and different sealed-in pressures ( ∼100 kPa and ∼2 kPa) are demonstrated. The use of a porous cover on top of the release holes avoids deposition inside the cavity during sealing, but leads to a sealed-in pressure of approximately 100 kPa, i.e. atmospheric pressure. Vacuum (∼2 kPa) sealing has been achieved by direct deposition of a sealing material on the SiGe capping layer. Packaged functional accelerometers sealed at around 100 kPa have an equivalent performance in measuring accelerations of about 1 g compared to a piezoelectric commercial reference device. Vacuum-sealed beam resonators survive a 1000 h 85°C/85% RH highly accelerated storage test and 1000 thermal cycles between-40 °C and 150 °C.

本文言語English
論文番号6070940
ページ(範囲)110-120
ページ数11
ジャーナルJournal of Microelectromechanical Systems
21
1
DOI
出版ステータスPublished - 2012 2月

ASJC Scopus subject areas

  • 機械工学
  • 電子工学および電気工学

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