Pliant epitaxial ionic oxides on silicon

Dmitry Kukuruznyak, Harald Reichert, Kenji Ohmori, Parhat Ahmet, Toyohiro Chikyo

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A new ionic structure that accommodates local atomic alterations as easily as native SiO2 CRN was investigated. Composition spread thin films of the RE2O3-Al2O3-HfO2 systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al2O3 was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 Å to approximately 4 Å. The substrate was rotated and two other stripes of RE2O3 and HfO2 were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.

本文言語English
ページ(範囲)3827-3831
ページ数5
ジャーナルAdvanced Materials
20
20
DOI
出版ステータスPublished - 2008 10 17
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「Pliant epitaxial ionic oxides on silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル