A new ionic structure that accommodates local atomic alterations as easily as native SiO2 CRN was investigated. Composition spread thin films of the RE2O3-Al2O3-HfO2 systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al2O3 was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 Å to approximately 4 Å. The substrate was rotated and two other stripes of RE2O3 and HfO2 were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.
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