Platinum/porous GaN nanonetwork metal-semiconductor Schottky diode for room temperature hydrogen sensor

研究成果: Article査読

20 被引用数 (Scopus)

抄録

An in-plane electrically conductive honeycomb GaN nanonetwork grown by molecular beam epitaxy was used to fabricate a platinum (Pt)/porous GaN nanonetwork Schottky diode type hydrogen sensor. The Pt Schottky contact is a nanonetwork with typical width of 40 nm. Both the scanning electron microscopy image and current-voltage curve indicates that the Pt/porous GaN nanonetwork Schottky diode with barrier height of 0.497 eV and ideality factor of 38.5 is comprised of parallel nano-Schotttky diodes. The operating temperature of this Schottky diode hydrogen sensor on the porous GaN nanonetwork is successfully decreased to room temperature and it performs well in detecting hydrogen gas with various concentrations from 320 to 10,000 ppm.

本文言語English
ページ(範囲)52-56
ページ数5
ジャーナルSensors and Actuators, A: Physical
209
DOI
出版ステータスPublished - 2014 3 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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