Plasmon-resonant microchip emitters and their applications to terahertz spectroscopy

T. Otsuji, Y. Tsuda, T. Komori, T. Nishimura, A. El Fatimy, Y. M. Meziani, T. Suemitsu, E. Sano

研究成果: Conference contribution

抄録

This paper reviews recent advances in emission of THz radiation from our original dual-grating gate high-electron mobility transistors (HEMT's) originated from two-dimensional plasmons. The dual grating gates can alternately modulate the 2D electron densities to periodically distribute the plasmonic cavities along the channel, acting as an antenna. The sample was fabricated with standard GaAs-based heterostructure material systems, succeeding in emission of broadband (0.5 to 6.5 THz) radiation even at room temperature from self-oscillating 2D plasmons under appropreate DC-bias conditions. Currently maximum available THz output power is estimated to be on the order of 1 to 10 μW from a single die active area of 75 × 75 μm2 with an excellent power conversion efficiency of 10-3. The fabricated device was introduced to the Fourier-transform infrared spectroscopy as a microchip THz source. Water-vapor absorption spectrum was successfully observed at 300 K, which is proven to the standard data provided by NASA.

本文言語English
ホスト出版物のタイトルProgress in Electromagnetics Research Symposium 2009, PIERS 2009 Beijing
出版社Electromagnetics Academy
ページ1-5
ページ数5
ISBN(印刷版)9781618390554
出版ステータスPublished - 2009 1 1
イベントProgress in Electromagnetics Research Symposium 2009, PIERS 2009 Beijing - Beijing, China
継続期間: 2009 3 232009 3 27

出版物シリーズ

名前Progress in Electromagnetics Research Symposium
1
ISSN(印刷版)1559-9450

Other

OtherProgress in Electromagnetics Research Symposium 2009, PIERS 2009 Beijing
CountryChina
CityBeijing
Period09/3/2309/3/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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