Plasma-induced damage and its control in plasma etching processes

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

The pulse-time-modulated (TM) plasma could reduce the ultraviolet (UV) photon induced defects in SiO2 film during the plasma etching process. In the TM plasma, the radio-frequency (RF) power for discharging plasma was modulated at a pulse-timing of a few tens microseconds. During the pulse-off period, UV photons radiation drastically decreased by reduction of electron energy in the plasma. As a result, UV photon-induced defects in SiO2 film, such as E′ center, could be reduced in the case of using the TM plasma, as compared with CW plasma. Additionally, we found that the state of E′ center generated in the TM plasma had lower energy level than that caused by the CW plasma. Then, lower temperature annealing was needed for the recovery of E′ center in the case of using TM plasma, whereas the CW plasma process needed higher temperature annealing. These results clarified that the exciting state of UV photon-induced defects in SiO2 film could be lowered by using the TM plasma.

本文言語English
ホスト出版物のタイトルProceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
ページ101-104
ページ数4
DOI
出版ステータスPublished - 2007 12月 1
イベント2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
継続期間: 2007 5月 302007 6月 1

出版物シリーズ

名前Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
国/地域United States
CityAustin, TX
Period07/5/3007/6/1

ASJC Scopus subject areas

  • 電子工学および電気工学

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