Plasma-induced damage and its control in plasma etching processes

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

The pulse-time-modulated (TM) plasma could reduce the ultraviolet (UV) photon induced defects in SiO2 film during the plasma etching process. In the TM plasma, the radio-frequency (RF) power for discharging plasma was modulated at a pulse-timing of a few tens microseconds. During the pulse-off period, UV photons radiation drastically decreased by reduction of electron energy in the plasma. As a result, UV photon-induced defects in SiO2 film, such as E′ center, could be reduced in the case of using the TM plasma, as compared with CW plasma. Additionally, we found that the state of E′ center generated in the TM plasma had lower energy level than that caused by the CW plasma. Then, lower temperature annealing was needed for the recovery of E′ center in the case of using TM plasma, whereas the CW plasma process needed higher temperature annealing. These results clarified that the exciting state of UV photon-induced defects in SiO2 film could be lowered by using the TM plasma.

元の言語English
ホスト出版物のタイトルProceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
ページ101-104
ページ数4
DOI
出版物ステータスPublished - 2007 12 1
イベント2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
継続期間: 2007 5 302007 6 1

出版物シリーズ

名前Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
United States
Austin, TX
期間07/5/3007/6/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Samukawa, S. (2007). Plasma-induced damage and its control in plasma etching processes. : Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 101-104). [4299549] (Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2007.4299549