Plasma effects in lateral Schottky junction tunneling transit-time terahertz oscillator

V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We study the plasma oscillations in a two-dimensional electron channel with a reverse-biased Schottky junction. Using the developed model we show that the negative dynamic conductivity of the Schottky junction associated with the tunneling injection and electrontransit- time effect can result in the self-excitation of plasma oscillations (plasma instability) in the quasineutral portion of the channel serving as a resonant cavity. The spectrum of plasma oscillations and the conditions of their self-excitations are expressed via the structure parameters. The instability can be used in a novel diode device - lateral Schottky junction tunneling transit-time terahertz oscillator.

本文言語English
ページ(範囲)228-233
ページ数6
ジャーナルJournal of Physics: Conference Series
38
1
DOI
出版ステータスPublished - 2006 5 10

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Plasma effects in lateral Schottky junction tunneling transit-time terahertz oscillator」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル