Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi

研究成果: Article査読

166 被引用数 (Scopus)

抄録

Fluorinated amorphous carbon thin films (a-C:F) for use as low-dielectric-constant interlayer dielectrics are deposited by helicon-wave plasma enhanced chemical vapor deposition. To improve their thermal stability, the feasibility of adjusting the fluorine-to-carbon (F/C) ratio by changing the deposition pressure was investigated. Decreasing the pressure increased the dissociation of a source fluorocarbon material in the plasma and decreased the F/C ratio of the deposited film. Both the thermal stability and the dielectric constant of the a-C:F films were increased as the F/C ratio was decreased. Thus, there is a tradeoff relationship between a low dielectric constant and high thermal stability and the tradeoff could be optimized by the pressure during deposition. The mechanism of the pressure dependency of the dielectric constant of a-C:F films was investigated by quantifying the contribution of each polarization and found that a decrease in the dielectric constant of a-C:F films can be attributed to decreases in the orientational and electronic polarizations.

本文言語English
ページ(範囲)2739-2745
ページ数7
ジャーナルJournal of Applied Physics
86
5
DOI
出版ステータスPublished - 1999 9
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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